MOS管 NCE4060k
- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
NCE N-Channel Enhancement Mode Power MOSFET
Modle:NCE4060K
一、Description
The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
二、General Features
l VDS =80V,ID=105A
RDS(ON)< 6.5m @ V =10V
l High density cell design for ultra low Rdson
l Fully characterized avalanche voltage and current
l Good stability and uniformity with high EAS
l Excellent package for good heat dissipation
l Special process technology for high ESD capability
三、Application
l Loadswitching
l Hard switched and high frequency circuits
l Uninterruptible power supply
四、Package Marking And Ordering Information
五、Absolute Maximum Ratings (T =25unless otherwise noted)
全国咨询热线:18929103949 唐小姐
销售部电话:0769-81150556
工程部电话:0769-85638990
QQ:1923681612
邮箱:dgzm699@163.com
总部地址:东莞市大岭山镇矮岭冚村沿河东街8号
佛山办事处:佛山市顺德区容桂镇细滘德宝北路合安街19号
中铭官网:www.zm699.com
* 联系人: | 请填写您的真实姓名 |
* 手机号码: | 请填写您的联系电话 |
电子邮件: | |
* 采购意向描述: | |
请填写采购的产品数量和产品描述,方便我们进行统一备货。 | |
验证码: | |
- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
相关资讯
我要评论: | |
内 容: |
(内容最多500个汉字,1000个字符) |
验证码: | 看不清?! |
销售电话:0769-81150556
工程电话:0769-85638990
传真:0769-83351643
地址:东莞市矮岭冚村沿河东街8号
共有-条评论【我要评论】