代理新洁能NCE8290 TO-220F N沟道MOSFET场效应管
- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
代理新洁能NCE8290 TO-220F N沟道MOSFET场效应管
Modle：NCE8290
一、Description
The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
二、General Features
l VDS =82V,ID=90A
RDS(ON)< 8.5m @ V =10V (Typ:7.5m)
l High density cell design for ultra low Rdson
l Fully characterized avalanche voltage and current
l Good stability and uniformity with high EAS
l Excellent package for good heat dissipation
l Special process technology for high ESD capability
三、Application
l Power switching application
l Hard switched and High frequency circuits
l Uninterruptible power supply
四、Package Marking And Ordering Information
五、Absolute Maximum Ratings (T =25unless otherwise noted)
NCE8290场效应MOS管方案应用资料及参考手册请咨询新洁能代理商东莞市中铭电子，专业的FAE提供技术支持服务
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- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
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