MOS管650V--NCE65R1K2Z
- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
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- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
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