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MOS管 NCE01P13

产品分类：新洁能

The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested

订购热线：18929103949

跟此产品相关的产品

: 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

: 龙腾N渠道650V,7A超级MOS管--LND7N65D; The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.

: 龙腾N渠道650V,16A超级MOS管--LND16N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

产品详情格书下载

NCE N-Channel Enhancement Mode Power MOSFET

Modle：NCE01P13

一、Description

The NCE01P13 uses advanced trench technology and design to provide excellent R_DS(ON)with low gate charge. It can be used in a wide variety of applications. It is ESD protested

二、General Features

l V_DS = 100V,I_D= -13A

R_DS(ON)< 200m @ V_GS =10V (Typ:170m)

l Super high dense cell design

l Advanced trench process technology

l Reliable and rugged

l High density celldesign for ultra low on-resistance

三、Application

l Power switch

l DC/DC converters

四、Package Marking And Ordering Information

NCE01P13 封装和订购信息

五、Absolute Maximum Ratings (T =25unless otherwise noted)

NCE01P13 最大参数

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大功率场效应管|mosfet|mos

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跟此产品相关的产品

: 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

: 龙腾N渠道650V,7A超级MOS管--LND7N65D; The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.

: 龙腾N渠道650V,16A超级MOS管--LND16N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.