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MOS管 NCE60P50

产品分类：新洁能

The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load applications.

订购热线：18929103949

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: 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

: 龙腾N渠道650V,7A超级MOS管--LND7N65D; The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.

: 龙腾N渠道650V,16A超级MOS管--LND16N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

产品详情格书下载

NCE N-Channel Enhancement Mode Power MOSFET

Modle：NCE60P50

一、Description

The NCE60P50 uses advanced trench technology and design to provide excellent R_DS(ON) with low gate charge. This device is well suited for high current load applications.

二、General Features

l V_DS =-60V,I_D=-50A

R_DS(ON)< 28m @ V =-10V (Typ:5.8m)

l High density cell design for ultra low Rdson

l Fully characterized avalanche voltage and current

l Good stability and uniformity with high E

l Excellent package for good heat dissipation

三、Application

l Load switch

四、Package Marking And Ordering Information

NCE60P50 封装和订购信息

五、Absolute Maximum Ratings (T =25unless otherwise noted)

NCE60P50 最大参数

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跟此产品相关的产品

: 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

: 龙腾N渠道650V,7A超级MOS管--LND7N65D; The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.

: 龙腾N渠道650V,16A超级MOS管--LND16N65; Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.