MOS管 NCE8580
- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
NCE N-Channel Enhancement Mode Power MOSFET
Modle：NCE8580
一、Description
The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
二、General Features
l VDS =85V,ID=80A
RDS(ON)< 8.5m @ V =10V (Typ:6.8m)
l High density cell design for ultra low Rdson
l Fully characterized avalanche voltage and current
l Good stability and uniformity with high EAS
l Excellent package for good heat dissipation
l Special process technology for high ESD capability
l Special designed for convertors and power controls
三、Application
l Power switching application
l Hard switched and High frequency circuits
l Uninterruptible power supply
四、Package Marking And Ordering Information
五、Absolute Maximum Ratings (T =25unless otherwise noted)
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- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
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