NCE新洁能场效应MOS管 NCE7578 TO-220F 电流78A 电压75V
- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
NCE新洁能场效应MOS管 NCE7578 TO-220F 电流78A 电压75V
Modle：NCE7578
一、Description
The NCE7578 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
二、General Features
l VDS =68V,ID=90A
RDS(ON)< 7.5m @ V =10V (Typ:6.5m)
l Special process technology for high ESD capability
l Special designed for Convertors and power controls
l High density cell design for ultra low Rdson
l Fully characterized Avalanche voltage and current
l Good stability and uniformity with high EAS
l Excellent package for good heat dissipation
三、Application
l Power switching application
l Hard switched and High frequency circuits
l Uninterruptible power supply
四、Package Marking And Ordering Information
五、Absolute Maximum Ratings (T =25unless otherwise noted)
NCE7578场效应MOS管方案应用资料及参考手册请咨询新洁能代理商东莞市中铭电子，专业的FAE提供技术支持服务
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- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
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