NCE新洁能MOS管 NCE7075 70V 75A场效应管
- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
NCE新洁能MOS管 NCE7075 70V 75A场效应管
Modle：NCE7075
一、Description
The NCE7075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
二、General Features
l VDS =70V,ID=75A
RDS(ON)< 13m @ V =10V (Typ:10.5m)
l High density cell design for ultra low Rdson
l Fully characterized avalanche voltage and current
l Good stability and uniformity with high EAS
l Excellent package for good heat dissipation
l Special process technology for high ESD capability
三、Application
l Power switching application
l Hard switched and High frequency circuits
l Uninterruptible power supply
四、Package Marking And Ordering Information
五、Absolute Maximum Ratings (T =25unless otherwise noted)
NCE7075场效应MOS管方案应用资料及参考手册请咨询新洁能代理商东莞市中铭电子，专业的FAE提供技术支持服务
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- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
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