NCE新洁能NCE65R1K2I,NCE65R1K2K场效应MOS管
产品分类： 新洁能
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
订购热线：18929103949
- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
NCE新洁能NCE65R1K2I,NCE65R1K2K场效应MOS管
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NCE65R1K2I,NCE65R1K2K方案应用资料及参考手册请咨询新洁能代理商东莞市中铭电子，专业的FAE提供技术支持服务
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全国咨询热线：18929103949 唐小姐
销售部电话：0769-81150556
工程部电话：0769-85638990
QQ：1923681612
邮箱：dgzm699@163.com
总部地址：东莞市大岭山镇矮岭冚村沿河东街8号
佛山办事处：佛山市顺德区容桂镇细滘德宝北路合安街19号
中铭官网：www.zm699.com
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- 龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
- 龙腾N渠道650V,7A超级MOS管--LND7N65D
- The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
- 龙腾N渠道650V,16A超级MOS管--LND16N65
- Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
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联系中铭
全国咨询热线：18929103949
销售电话：0769-81150556
工程电话：0769-85638990
传真：0769-83351643
地址：东莞市矮岭冚村沿河东街8号
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