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N沟道增强型功率mosfet--NCE3010S

产品分类: 功率器件
    The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
    订购热线:18929103949
    增强型功率mosN沟道--NCE4080K
    增强型功率mosN沟道--NCE4080K
    The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
    N通道超级沟槽ii功率mosfet--NCEP058N85D
    N通道超级沟槽ii功率mosfet--NCEP058N85D
    The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
    网格状高压力高功率MOSFET--PN7308
    网格状高压力高功率MOSFET--PN7308
    The PN7308 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600 V.Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.

                   N沟道增强型功率mosfet--NCE3010S

      一 概述

      The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. 

       

      二 特性

      VDS=30V,ID=10A
        RDS(ON)<12mΩ @VGS=10V
        RDS(ON)<16mΩ @VGS=4.5V
      High density cell design for ultra low Rdson
      Fully characterized Avalanche voltage and current
       

      三 应用

      Power switching application
      Hard Switched and High Frequency Circuits
      Uninterruptible Power Supply
       

      四 封装

       

      五 应用电路图

       

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      增强型功率mosN沟道--NCE4080K
      增强型功率mosN沟道--NCE4080K
      The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
      N通道超级沟槽ii功率mosfet--NCEP058N85D
      N通道超级沟槽ii功率mosfet--NCEP058N85D
      The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
      网格状高压力高功率MOSFET--PN7308
      网格状高压力高功率MOSFET--PN7308
      The PN7308 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600 V.Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
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