新洁能场效应管NCE65NF099F-MOS管TO-220F封装
新洁能场效应管NCE65NF099F
-MOS管TO-220F封装
一、General Description
The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recovery bodydiode.This super junction MOSFET fits the industry’s AC-DCSMPS requirements for PFC, AC/DC power conversion,industrial power applications,Fast charger, new energyvehicle charging pile, on-board OBC etc.
二、Features
New technology for high voltage device
Ultra low on-resistance and ultra low conduction losses
Ultra Low Gate Charge cause lower driving requirements
Diode reverse recovery speed is super fast
High reliability
ROHS compliant
三、Application
Power factor correction(PFC)
Switched mode power supplies(SMPS)
Uninterruptible Power Supply(UPS)
On-board charger(OBC)’
四、Package Marking And Ordering Information
五、Schematic diagram
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