芯朋微代理高低侧栅极驱动IC--PN7113
产品分类： 电机驱动芯片
PN7113是一款基于P_SUBP_EPI工艺的高压、高速功率MOSFET和IGBT高低侧驱动芯片。其浮地通道能工作在600V的高压下，可用于驱动2个N型功率MOSFET或IGBT结构。该芯片逻辑输入电平兼容低至3V的CMOS 或LSTTL逻辑输出电平。输出具有大电流脉冲能力。传输延时具有匹配性，以简化在高频下的应用。
订购热线：18929103949
- 高电压,高功率驱动MOSFET--PN7104
- The PN7104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
- 网格状高功率MOSFET--PN7303
- The PN7303 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
- 网格状高压力高功率MOSFET--PN7308
- The PN7308 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600 V.Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
芯朋微代理高低侧栅极驱动IC--PN7113
一 概述
PN7113是一款基于P_SUBP_EPI工艺的高压、高速功率MOSFET和IGBT高低侧驱动芯片。其浮地通道能工作在600V的高压下，可用于驱动2个N型功率MOSFET或IGBT结构。该芯片逻
辑输入电平兼容低至3V的CMOS 或LSTTL逻辑输出电平。输出具有大电流脉冲能力。传输延时具有匹配性，以简化在高频下的应用。
二 特性
高压范围达+600V
3V逻辑兼容
自举工作的浮地通道
栅驱动电压范围10V~20V
双通道欠压保护(UVLO)功能
输出电流能力2.5A
高低侧通道均延时匹配
三 应用
中小型功率电机驱动
功率MOSFET或IGBT驱动
照明整流器
四 封装
五 典型应用
高低侧栅极驱动IC方案应用资料及参考手册请咨询芯朋微代理商东莞市中铭电子，专业的FAE提供技术支持服务
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- 高电压,高功率驱动MOSFET--PN7104
- The PN7104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
- 网格状高功率MOSFET--PN7303
- The PN7303 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
- 网格状高压力高功率MOSFET--PN7308
- The PN7308 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600 V.Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
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