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龙腾N渠道650V,16A超级MOS管--LND16N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...
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龙腾N渠道650V,7A超级MOS管--LND7N65D
The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...
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龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...
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650V 场效应MOS管--NCE65R900I,NCE65R900K
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
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新洁能MOS:NCE65R900,NCE65R900D,NCE65R900F
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
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场效应MOS管650V--NCE65R1K2Z新洁能代理商
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
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650V新洁能MOS管--NCE65R1K2,NCE65R1K2D,NCE65R1K2F
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
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NCE新洁能NCE65R1K2I,NCE65R1K2K场效应MOS管
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...
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NCE新洁能650V MOS管--NCE65R2K4I,NCE65R2K4K场效应管
General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...
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新洁能代理650V MOS管--NCE65R540I, NCE65R540K场效应管
General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...
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新洁能授权代理商供应MOS管--NCE3407A
Description The NCE3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applicat...
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中铭电子是新洁能授权代理供应MOS管--NCE3407
MOS管--3407 封装是SOT-23.THE NCE3407 USES ADVANCED TRENCH TECHNOLOGU TO JROVIDE EXCELLONT RDS(ON).
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7A、800V N沟道增强型场效应管--SVF7N80T/F
SVF7N80T/F N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。
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2A、600V N沟道增强型场效应管--SVF2N60M/MJ/N/F/T/D
SVF2N60M/MJ/N/F/T/D N沟道增强型高压功率 MOS 场效应晶体管采用士兰微电子的 F-CellTM平面高压VDMOS 工艺技术制造。
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1A、600V N沟道增强型场效应管--SVF1N60AM/MJ/B/D/F/H
SVF1N60AM/MJ/B/D/F/H N 沟道增强型高压功率 MOS 场效应晶体管采用士兰微电子的 F-CellTM平面高压 VDMOS 工艺技术制造。
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7A,700V DP MOS功率管--SVS7N70M/MJ/F
SVS7N70M/MJ/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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7A,650V DP MOS功率管--SVS7N65F/D
SVS7N65F/D N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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7A,600V DP MOS功率管--SVS7N60D/F
SVS7N60D/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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6A,700V DP MOS功率管--SVS6N70M/MJ/D
SVS6N70M/MJ/D N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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6A,650V DP MOS功率管--SVS6N65F
SVS6N65F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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