龙腾N渠道650V,16A超级MOS管--LND16N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

龙腾N渠道650V,7A超级MOS管--LND7N65D

The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...

龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

650V MOS管--NCE65R900I,NCE65R900K

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

新洁能MOS:NCE65R900,NCE65R900D,NCE65R900F

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

MOS管650V--NCE65R1K2Z

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

NCE65R1K2,NCE65R1K2D,NCE65R1K2F

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

NCE65R1K2I,NCE65R1K2K

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

NCE65R2K4I,NCE65R2K4K

General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...

NCE65R540I, NCE65R540K

General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...

MOS管--NCE3407A

Description The NCE3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applicat...

新洁能MOS管--NCE3407

MOS管--3407 封装是SOT-23.THE NCE3407 USES ADVANCED TRENCH TECHNOLOGU TO JROVIDE EXCELLONT RDS(ON).

10A、650V N沟道增强型场效应管--SVF10N65T/F/K/S

SVF10N65T/F/K/S N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。

7A、650V N沟道增强型场效应管--SVF7N65T/F/K/S

SVF4N65T/F/K/S N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。

5A、600V N沟道增强型场效应管--SVF5N60T/F/D/MJ/K

SVF5N60T/F/D/MJ/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。

4A、650V N沟道增强型场效应管--SVF4N65T/F/M/MJ/D/K

SVF4N65T/F/M/MJ/D/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。

3A、800V N沟道增强型场效应管--SVF3N80M/MJ/F/D

SVF3N80M/MJ/F/D N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。

12A、650V N沟道增强型场效应管--SVF12N65T/F/K/S

SVF12N65T/F/K/S N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。

7A、800V N沟道增强型场效应管--SVF7N80T/F

SVF7N80T/F N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。

2A、600V N沟道增强型场效应管--SVF2N60M/MJ/N/F/T/D

SVF2N60M/MJ/N/F/T/D N沟道增强型高压功率 MOS 场效应晶体管采用士兰微电子的 F-CellTM平面高压VDMOS 工艺技术制造。