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热门关键词: led恒流驱动芯片 MOS管 led驱动 智能IGBT 华南华东IGBT IGBTIGBT 深圳IGBT IGBT公司 IGBT售后 IGBT代理

新洁能NCE65NF190V场效应管
新洁能NCE65NF190V场效应管
The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MO...
新洁能场效应管NCE65NF036T-TO-247封装MOS管
新洁能场效应管NCE65NF036T-TO-247封装MOS管
The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid reco...
新洁能场效应管NCE65NF023T-TO-220F封装MOS管
新洁能场效应管NCE65NF023T-TO-220F封装MOS管
The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recover...
新洁能场效应管NCE65NF068T-TO-247封装MOS管
新洁能场效应管NCE65NF068T-TO-247封装MOS管
新洁能场效应管NCE65NF099F-MOS管TO-220F封装
新洁能场效应管NCE65NF099F-MOS管TO-220F封装
The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recover...
新洁能MOS管NCE65NF130F场效应管
新洁能MOS管NCE65NF130F场效应管
The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recover...
新洁能场效应管650V-MOS管NCE65TF130F
新洁能场效应管650V-MOS管NCE65TF130F
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junctio...
MOS管  650V N沟道TO-220F MOSFET场效应管-NCE65T180F
MOS管 650V N沟道TO-220F MOSFET场效应管-NCE65T180F
The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MO...
N通道超级沟槽ii功率mosfet--NCEP058N85D
N通道超级沟槽ii功率mosfet--NCEP058N85D
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both c...
增强型功率mosN沟道--NCE4080K
增强型功率mosN沟道--NCE4080K
The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...
N沟道增强型功率mosfet--NCE3010S
N沟道增强型功率mosfet--NCE3010S
The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...
龙腾12A,N渠道650V超级MOS管--LND12N65
龙腾12A,N渠道650V超级MOS管--LND12N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...
龙腾10A,N渠道650V超级MOS管--LND10N65
龙腾10A,N渠道650V超级MOS管--LND10N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology.The resulting device has low conduction resistance,superior switching performanc...
龙腾N渠道650V,4A超级MOS管--LND4N65
龙腾N渠道650V,4A超级MOS管--LND4N65
The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...
龙腾N渠道650V,16A超级MOS管--LND16N65
龙腾N渠道650V,16A超级MOS管--LND16N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...
龙腾N渠道650V,7A超级MOS管--LND7N65D
龙腾N渠道650V,7A超级MOS管--LND7N65D
The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...
龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...
MOS管--NCE3407A
MOS管--NCE3407A
Description The NCE3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applicat...
新洁能MOS管--NCE3407
新洁能MOS管--NCE3407
MOS管--3407 封装是SOT-23.THE NCE3407 USES ADVANCED TRENCH TECHNOLOGU TO JROVIDE EXCELLONT RDS(ON).
10A、650V N沟道增强型场效应管--SVF10N65T/F/K/S
10A、650V N沟道增强型场效应管--SVF10N65T/F/K/S
SVF10N65T/F/K/S N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。
记录总数:50 | 页数:3123  
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