POWER MOSFET--8N60

The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low o...

POWER MOSFET--5N60

The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resi...

POWER MOSFET-- 4N60-C

The UTC 4N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state re...

POWER MOSFET--2N70

The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and hi...

POWER MOSFET--2N60

The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state res...

POWER MOSFET--1N60

The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance...

MOSFET场效应晶体管-SVF12N60

SVF12N60T/F/SN沟道增强型功率MOS场效应晶体管采用士兰微电子的F-CellTM平面VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，H桥PWM马达驱动。

MOSFET场效应晶体管-SVF10N60

SVF10N60T/F/FG/S/KN沟道增强型功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，H桥PWM马达驱动。

MOSFET场效应晶体管-SVF8N60

SVF8N60T/FN沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM 马达驱动。

MOSFET场效应晶体管-SVF7N60

SVF7N60T/F/S/K/MJ N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，H桥PWM马达驱动。

MOSFET场效应晶体管-SVF4N60

SVF4N60D/F/FG/T/K/M/MJN沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM...

MOSFET场效应晶体管-SVF2N60

SVF2N60M/MJ/N/F/T/DN 沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM马达...

MOSFET场效应晶体管-SVF1N60

SVF1N60AM/MJ/B/D/F/HN 沟道增强型高压功率MO场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及高的雪崩击穿耐量。该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压 H桥PWM马达...