网格状高功率MOSFET--PN7303
- 高电压,高功率驱动MOSFET--PN7104
- The PN7104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
- 芯朋微代理高低侧栅极驱动IC--PN7113
- PN7113是一款基于P_SUBP_EPI工艺的高压、高速功率MOSFET和IGBT高低侧驱动芯片。其浮地通道能工作在600V的高压下，可用于驱动2个N型功率MOSFET或IGBT结构。该芯片逻辑输入电平兼容低至3V的CMOS 或LSTTL逻辑输出电平。输出具有大电流脉冲能力。传输延时具有匹配性，以简化在高频下的应用。
- 网格状高压力高功率MOSFET--PN7308
- The PN7308 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600 V.Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
网格状高功率MOSFET--PN7303
一 概述
The PN7303 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.
二 特性
* Fully operational to+600V
* 3.3V logic compatible
* dV/dt Immunity ±50V/nsec
* Floating channel designed for bootstrap operation
* Gate drive supply range from 5V to 20V
* Output Source / Sink Current Capability400 mA/900mA
* Independent Logic Inputs to Accommodate All Topologies
* -5V negative Vs ability
* Matched propagation delay for both channels
* Fixed Dead Time
三 应用
* Small and medium- power motor driver
* Power MOSFET or IGBT driver
* Half-Bridge Power Converters
* Full-Bridge Power Converters
四 封装
五 典型应用
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- 高电压,高功率驱动MOSFET--PN7104
- The PN7104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
- 芯朋微代理高低侧栅极驱动IC--PN7113
- PN7113是一款基于P_SUBP_EPI工艺的高压、高速功率MOSFET和IGBT高低侧驱动芯片。其浮地通道能工作在600V的高压下，可用于驱动2个N型功率MOSFET或IGBT结构。该芯片逻辑输入电平兼容低至3V的CMOS 或LSTTL逻辑输出电平。输出具有大电流脉冲能力。传输延时具有匹配性，以简化在高频下的应用。
- 网格状高压力高功率MOSFET--PN7308
- The PN7308 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600 V.Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
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