基于P衬底、P外延的高压、高速功率MOSFET和IGBT驱动芯片--PN7103

PN7103 是一款基于 P衬底、P外延的高压、高速功率 MOSFET和 IGBT驱动芯片。其浮地通道能工作在600V的高压下，可用于驱动 2个N型功率 MOSFET或 IGBT组成的半桥结构。该芯片逻辑输入电平兼容 3.3V的CMOS或 LSTTL逻辑输出电平。输出具有大电流脉冲能力。传输延时具有匹...

3段高压驱动电源芯片--PN7336

PN7336是-款用于三相全桥栅极驱动芯片，内置三个独立的半桥驱动电路，可用于高压，高速MOSFET和IGBT，输入信号可以兼容CMOS和LSTTL信号，逻辑输入电平低至3.3V，芯片内部集成了过流检测功能，当检测到过流信号时会关断6路驱动输出信号，芯片集成了一个漏极开路啊FAULT功能指示，可用于提示过流或...

具有功耗睡眠模式的两通道马达驱动芯片--PN7705

PN7705是一款具有功耗睡眠模式的两通道直流马达驱动芯片，其可以控制马达进入正转、反转、刹车和功耗睡眠模式。该芯片集成了欠压保护、过温保护、输出短路保护和外部可调节驱动限流等功能，并且可以将错误状态反馈给MCU，保障马达工作。该芯片的两个输入管脚IN1和IN2兼容5V和3.3V信号控制，具有良好的抗干扰性。...

网格状高压力高功率MOSFET--PN7308

The PN7308 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-...

网格状高功率MOSFET--PN7303

The PN7303 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-...

高压力,高功率MOSFET--PN7106A/B

The PN7106A/B is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two...

高、低驱动程序高功率MOSFET--PN7113

The PN7113 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels based on P_SUB P_EPI pr...

高电压,高功率驱动MOSFET--PN7104

The PN7104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-...

网格状电机驱动芯片--PN7103

The PN7103 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-...

高、低驱动程序电机驱动芯片--PN7101

The PN7101 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-...

高压供电驱动芯片--PN7008A/B

The PN7008 is a high voltage, high speed power MOSFET and IGBT driver. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT ...

120V高、低驱动程序电机驱动芯片--PN7006A/B

The PN7006 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-...

半桥驱动芯片-PN7103

PN7103是一款基于P衬底、P外延的高压、高速功率MOSFET和IGBT驱动芯片，其浮地通道能工作在600V的高压下，可用于驱动2个N型功率MOSFET或IGBT组成半桥结构，该芯片逻辑输入电平兼容3.3V的CMOS或LSTTL逻辑输出电平。输出具有大电流脉冲能力，传输延时具有匹配性，以简化在高频下的应用。