NCE新洁能NCE65R1K2I,NCE65R1K2K场效应MOS管

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

NCE新洁能650V MOS管--NCE65R2K4I,NCE65R2K4K场效应管

General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...

新洁能代理650V MOS管--NCE65R540I, NCE65R540K场效应管

General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...

新洁能授权代理商供应MOS管--NCE3407A

Description The NCE3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applicat...

中铭电子是新洁能授权代理供应MOS管--NCE3407

MOS管--3407 封装是SOT-23.THE NCE3407 USES ADVANCED TRENCH TECHNOLOGU TO JROVIDE EXCELLONT RDS(ON).

7A、800V N沟道增强型场效应管--SVF7N80T/F

SVF7N80T/F N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。

2A、600V N沟道增强型场效应管--SVF2N60M/MJ/N/F/T/D

SVF2N60M/MJ/N/F/T/D N沟道增强型高压功率 MOS 场效应晶体管采用士兰微电子的 F-CellTM平面高压VDMOS 工艺技术制造。

7A，700V DP MOS功率管--SVS7N70M/MJ/F

SVS7N70M/MJ/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

7A，650V DP MOS功率管--SVS7N65F/D

SVS7N65F/D N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

7A，600V DP MOS功率管--SVS7N60D/F

SVS7N60D/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

6A，700V DP MOS功率管--SVS6N70M/MJ/D

SVS6N70M/MJ/D N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

6A，650V DP MOS功率管--SVS6N65F

SVS6N65F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

6A，600V DP MOS功率管--SVS6N60F/D/T/M/MJ

SVS6N60F/D/T/M/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

4A，650V DP MOS功率管--SVS4N65F/D/MJ

SVS4N65F/D/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

4A，600V DP MOS功率管--SVS4N60F/D/MJ

SVS4N60F/D/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

47A，600V DP MOS功率管--SVS47N60PN

SVS47N60PN N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

11A，650V DP MOS功率管--SVS11N65T/F

SVS11N65T/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

11A，600V DP MOS功率管--SVS11N60T/F

SVS11N60T/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。使得功率转换器高功率密度，提高热行为。

新洁能增强型N沟道 NCE8580 MOS管

The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load swit...

代理新洁能NCE8290 TO-220F N沟道MOSFET场效应管

The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.