1A、600V N沟道增强型场效应管--SVF1N60AM/MJ/B/D/F/H

SVF1N60AM/MJ/B/D/F/H N 沟道增强型高压功率 MOS 场效应晶体管采用士兰微电子的 F-CellTM平面高压 VDMOS 工艺技术制造。

7A，700V DP MOS功率管--SVS7N70M/MJ/F

SVS7N70M/MJ/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

7A，650V DP MOS功率管--SVS7N65F/D

SVS7N65F/D N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

7A，600V DP MOS功率管--SVS7N60D/F

SVS7N60D/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

6A，700V DP MOS功率管--SVS6N70M/MJ/D

SVS6N70M/MJ/D N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

6A，650V DP MOS功率管--SVS6N65F

SVS6N65F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

6A，600V DP MOS功率管--SVS6N60F/D/T/M/MJ

SVS6N60F/D/T/M/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

4A，650V DP MOS功率管--SVS4N65F/D/MJ

SVS4N65F/D/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

4A，600V DP MOS功率管--SVS4N60F/D/MJ

SVS4N60F/D/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

47A，600V DP MOS功率管--SVS47N60PN

SVS47N60PN N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

11A，650V DP MOS功率管--SVS11N65T/F

SVS11N65T/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。

11A，600V DP MOS功率管--SVS11N60T/F

SVS11N60T/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。使得功率转换器高功率密度，提高热行为。

MOS管 NCE8580

The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load swit...

MOS管 NCE7578

The NCE7578 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load swit...

MOS管 NCE6890

The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

MOS管 NCE4060k

The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

MOS管 NCE0117

The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

MOS管 NCE60P50

The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load...

MOS管 NCE65R540

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits ...

MOS管 NCE01P13

The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...