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6A,600V DP MOS功率管--SVS6N60F/D/T/M/MJ
SVS6N60F/D/T/M/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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4A,650V DP MOS功率管--SVS4N65F/D/MJ
SVS4N65F/D/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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4A,600V DP MOS功率管--SVS4N60F/D/MJ
SVS4N60F/D/MJ N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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47A,600V DP MOS功率管--SVS47N60PN
SVS47N60PN N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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11A,650V DP MOS功率管--SVS11N65T/F
SVS11N65T/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。
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11A,600V DP MOS功率管--SVS11N60T/F
SVS11N60T/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造,具有很低的传导损耗和开关损耗。使得功率转换器高功率密度,提高热行为。
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新洁能增强型N沟道 NCE8580 MOS管
The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load swit...
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代理新洁能NCE8290 TO-220F N沟道MOSFET场效应管
The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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NCE新洁能场效应MOS管 NCE7578 TO-220F 电流78A 电压75V
The NCE7578 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load swit...
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NCE新洁能MOS管 NCE7075 70V 75A场效应管
The NCE7075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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新洁能半导体NCE6890 TO-220 场效应MOS管
The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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MOS管 NCE4060k
The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...
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MOS管 NCE0117
The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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MOS管 NCE60P50
The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load...
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MOS管 NCE65R540
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits ...
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MOS管 NCE01P13
The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...
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POWER MOSFET--10N60K
The UTC 10N60K is an N-channel Power MOSFET using UTC`s advanced technology to provide customers a minimum on-state resistance and superior switching perf...
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POWER MOSFET--8N60
The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low o...
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POWER MOSFET--5N60
The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resi...
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POWER MOSFET-- 4N60-C
The UTC 4N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state re...
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