650V新洁能MOS管--NCE65R1K2,NCE65R1K2D,NCE65R1K2F

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

NCE新洁能NCE65R1K2I,NCE65R1K2K场效应MOS管

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fit...

NCE新洁能650V MOS管--NCE65R2K4I,NCE65R2K4K场效应管

General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...

新洁能代理650V MOS管--NCE65R540I, NCE65R540K场效应管

General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This supe...

新洁能授权代理商供应MOS管--NCE3407A

Description The NCE3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applicat...

中铭电子是新洁能授权代理供应MOS管--NCE3407

MOS管--3407 封装是SOT-23.THE NCE3407 USES ADVANCED TRENCH TECHNOLOGU TO JROVIDE EXCELLONT RDS(ON).

7A、800V N沟道增强型场效应管--SVF7N80T/F

SVF7N80T/F N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。

2A、600V N沟道增强型场效应管--SVF2N60M/MJ/N/F/T/D

SVF2N60M/MJ/N/F/T/D N沟道增强型高压功率 MOS 场效应晶体管采用士兰微电子的 F-CellTM平面高压VDMOS 工艺技术制造。

1A、600V N沟道增强型场效应管--SVF1N60AM/MJ/B/D/F/H

SVF1N60AM/MJ/B/D/F/H N 沟道增强型高压功率 MOS 场效应晶体管采用士兰微电子的 F-CellTM平面高压 VDMOS 工艺技术制造。

新洁能增强型N沟道 NCE8580 MOS管

The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load swit...

代理新洁能NCE8290 TO-220F N沟道MOSFET场效应管

The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

NCE新洁能场效应MOS管 NCE7578 TO-220F 电流78A 电压75V

The NCE7578 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load swit...

NCE新洁能MOS管 NCE7075 70V 75A场效应管

The NCE7075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

新洁能半导体NCE6890 TO-220 场效应MOS管

The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

MOS管 NCE4060k

The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

MOS管 NCE0117

The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

MOS管 NCE60P50

The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load...

MOS管 NCE65R540

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits ...

MOS管 NCE01P13

The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

POWER MOSFET--10N60K

The UTC 10N60K is an N-channel Power MOSFET using UTC`s advanced technology to provide customers a minimum on-state resistance and superior switching perf...