7A、650V N沟道增强型场效应管--SVF7N65T/F/K/S

SVF4N65T/F/K/S N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。

5A、600V N沟道增强型场效应管--SVF5N60T/F/D/MJ/K

SVF5N60T/F/D/MJ/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。

4A、650V N沟道增强型场效应管--SVF4N65T/F/M/MJ/D/K

SVF4N65T/F/M/MJ/D/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。

3A、800V N沟道增强型场效应管--SVF3N80M/MJ/F/D

SVF3N80M/MJ/F/D N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面高压VDMOS工艺技术制造。

12A、650V N沟道增强型场效应管--SVF12N65T/F/K/S

SVF12N65T/F/K/S N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。

7A、800V N沟道增强型场效应管--SVF7N80T/F

SVF7N80T/F N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。

2A、600V N沟道增强型场效应管--SVF2N60M/MJ/N/F/T/D

SVF2N60M/MJ/N/F/T/D N沟道增强型高压功率 MOS 场效应晶体管采用士兰微电子的 F-CellTM平面高压VDMOS 工艺技术制造。

1A、600V N沟道增强型场效应管--SVF1N60AM/MJ/B/D/F/H

SVF1N60AM/MJ/B/D/F/H N 沟道增强型高压功率 MOS 场效应晶体管采用士兰微电子的 F-CellTM平面高压 VDMOS 工艺技术制造。

MOS管 NCE8580

The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load swit...

MOS管 NCE7578

The NCE7578 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load swit...

MOS管 NCE6890

The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

MOS管 NCE4060k

The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

MOS管 NCE0117

The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

MOS管 NCE60P50

The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load...

MOS管 NCE65R540

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits ...

MOS管 NCE01P13

The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

POWER MOSFET--10N60K

The UTC 10N60K is an N-channel Power MOSFET using UTC`s advanced technology to provide customers a minimum on-state resistance and superior switching perf...

POWER MOSFET--8N60

The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low o...

POWER MOSFET--5N60

The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resi...

POWER MOSFET-- 4N60-C

The UTC 4N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state re...