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高电压,高功率驱动MOSFET--PN7104

产品分类: 电机驱动芯片
    The PN7104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
    订购热线:18929103949
    高、低驱动程序高功率MOSFET--PN7113
    高、低驱动程序高功率MOSFET--PN7113
    The PN7113 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
    网格状高功率MOSFET--PN7303
    网格状高功率MOSFET--PN7303
    The PN7303 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
    网格状高压力高功率MOSFET--PN7308
    网格状高压力高功率MOSFET--PN7308
    The PN7308 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600 V.Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.

                高电压,高功率驱动MOSFET--PN7104

      一 概述

      The PN7104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. Propagation delays are matched to simplify use in high frequency applications.

       

      二 特性

      * Fully operational to +600V

      * 3.3V logic compatible

      * dV/dt Immunity ±50V/nsec

      * Floating channel designed for bootstrap operation

      * Gate drive supply range from 10V to 20V

      * UVLO for low side channels

      * Output Source/Sink Current Capability 400mA/650mA

      * Cross Conduction Protection with 520ns Internal Fixed Dead Time

      * -10V negative Vs ability

      * Matched propagation delay for both channels

       

      三 应用 

      * Small and medium- power motor driver

      * Power MOSFET or IGBT driver

       

      四 封装

       

      五 典型应用

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      高、低驱动程序高功率MOSFET--PN7113
      高、低驱动程序高功率MOSFET--PN7113
      The PN7113 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
      网格状高功率MOSFET--PN7303
      网格状高功率MOSFET--PN7303
      The PN7303 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
      网格状高压力高功率MOSFET--PN7308
      网格状高压力高功率MOSFET--PN7308
      The PN7308 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600 V.Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
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