PN8601W是一款同步整流控制芯片，主要用于在高性能AC/DC反激系统中驱动次级同步整流MOS管以提升转换效率，适用于CCM、DCM和QR多种工作模式，使系统效率可以满足6级能效标准。[查看]

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AP8265是-款电流模脉宽调制控制器,专用于高性能、外围元器件精简的交直流转换开关电源。该芯片工作于准谐振开关模式，通过检测变压器的消磁信号，芯片使外部功率MOS管在谷底开通。集成的线电压前馈补偿功能可根据输入电压来调整电感峰值电流以保持全电压范围内功率恒定。准谐振工作模式以及轻载条件下的降频模式实现了全电压范围下的最佳效率和超低的待机功耗。AP8265提供了极为全面和性能优异的智能化保护功能，包括周期式过流保护(外部可调) .VDD欠压保护、VDD箝位保护、软启动、DMG外部使能等功能。为需要超低待机功耗的高性价比反激式开关电源系统提供了- -个先进的实现平台。[查看]

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PN8145T电源管理芯片内部集成了脉宽调制控制器和功率MOSFET,专用于高性能、外围元器件精简的交直流转换开关电源。该芯片提供了极为全面和性能优异的智能化保护功能，包括周期式过流保护(外部可调) .过载保护、过压保护、CS短路保护、软启动功能。通过Hi-mode.Eco-mode.Burst-mode的三种脉冲功率调节模式混合技术和特殊器件低功耗结构技术实现了超低的待机功耗，全电压范围下的最佳效率。[查看]

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PN8143T电源管理芯片内部集成了脉宽调制控制器和功率MOSFET，专用于高性能、外围元器件精简的交直流转换开关电源。该芯片提供了极为全面和性能优异的智能化保护功能，包括周期式过流保护（外部可调）、过载保护、过压保护、CS短路保护、软启动功能。[查看]

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The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MOSFET fits theindustry’s AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial power applications[查看]

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The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]

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The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MOSFET fits theindustry’s AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial power applications[查看]

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The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recovery bodydiode.This super junction MOSFET fits the industry’s AC-DCSMPS requirements for PFC, AC/DC power conversion,industrial power applications,Fast charger, new energyvehicle charging pile, on-board OBC etc[查看]

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The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recovery bodydiode.This super junction MOSFET fits the industry’s AC-DCSMPS requirements for PFC, AC/DC power conversion,industrial power applications,Fast charger, new energyvehicle charging pile, on-board OBC etc.[查看]

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The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recovery bodydiode.This super junction MOSFET fits the industry’s AC-DCSMPS requirements for PFC, AC/DC power conversion,industrial power applications,Fast charger, new energyvehicle charging pile, on-board OBC etc.[查看]

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The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recovery bodydiode.This super junction MOSFET fits the industry’s AC-DCSMPS requirements for PFC, AC/DC power conversion,industrial power applications,Fast charger, new energyvehicle charging pile, on-board OBC etc.[查看]

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Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.[查看]

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The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.[查看]

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Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.[查看]

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The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.[查看]

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Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology.The resulting device has low conduction resistance,superior switching performance and high avalanche energy.[查看]

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Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.[查看]

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AP2004H是一个恒定频率峰值电流模式的异步PWM 升压转换器。需要一个外部肖特基二极管。在轻负载时，AP2004H工作在轻负载模式。静态电流为100uA，关断电流小于1uA。内部 NMOS管导通电阻130兆欧姆，保证在整个输出负载范围内。3A峰值电流使得 AP2004H可以提供1.5A输出负载电流。非常适应于MID和移动电源。输入电压范围2.5 ~ 5.5V。内部工作频率是设定在1.0MHz。[查看]

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AP2008是一个恒定频率峰值电流模式的异步PWM升压转换器。需要一个外部肖特基二极管。在轻负载时，AP2008工作在轻负载模式。静态电流为100uA，内部NMOS管导通电阻为200mΩ，保证在整个输出负载范围内效率高。2A峰值电流使得AP2008可以提供1A输出负载电流，非常适应于MID和移动电源。输入电压范围3V~ 25V。内部工作频率是设定在1.0MHz。 AP2008采用6引脚的扁平SOT-23封装。[查看]

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