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龙腾N渠道650V,20A超级MOS管--LND20N65/LNB20N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.[查看]
http://zm699.com/Products/ltnqd650v2.html3星
龙腾N渠道650V,7A超级MOS管--LND7N65D
The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.[查看]
http://zm699.com/Products/ltnqd650v7.html3星
龙腾N渠道650V,16A超级MOS管--LND16N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.[查看]
http://zm699.com/Products/ltnqd650v1.html3星
龙腾N渠道650V,4A超级MOS管--LND4N65
The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.[查看]
http://zm699.com/Products/ltnqd650v4.html3星
龙腾10A,N渠道650V超级MOS管--LND10N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology.The resulting device has low conduction resistance,superior switching performance and high avalanche energy.[查看]
http://zm699.com/Products/lt10anqd65.html3星
龙腾12A,N渠道650V超级MOS管--LND12N65
Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.[查看]
http://zm699.com/Products/lt12anqd65.html3星
5A 800V N沟道增强型场效应管--SVF5N80F/T/MJ/K
SVF5N80F/T/MJ/K N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-CellTM平面VDMOS工艺技术制造。工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。 该产品可广泛应用于AC-DC开关电源,DC-DC电源转换器,高压H桥PWM马达驱动。[查看]
http://zm699.com/Products/5a800vngdz.html3星
MOS管--NCE3407A
Description The NCE3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications[查看]
http://zm699.com/Products/mosgnce340.html3星
NCE65R540I, NCE65R540K
General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]
http://zm699.com/Products/nce65r540i.html3星
NCE65R2K4I,NCE65R2K4K
General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]
http://zm699.com/Products/nce65r2k4i.html3星
NCE65R1K2I,NCE65R1K2K
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]
http://zm699.com/Products/nce65r1k2i.html3星
NCE65R1K2,NCE65R1K2D,NCE65R1K2F
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]
http://zm699.com/Products/nce65r1k2n.html3星
MOS管650V--NCE65R1K2Z
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]
http://zm699.com/Products/mosg650vnc.html3星
新洁能MOS:NCE65R900,NCE65R900D,NCE65R900F
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]
http://zm699.com/Products/xjnmosnce6.html3星
650V MOS管--NCE65R900I,NCE65R900K
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]
http://zm699.com/Products/650vmosgnc.html3星
新洁能MOS管--NCE3407
MOS管--3407 封装是SOT-23.THE NCE3407 USES ADVANCED TRENCH TECHNOLOGU TO JROVIDE EXCELLONT RDS(ON).[查看]
http://zm699.com/Products/xjnmosgnce.html3星
MOS管 NCE65R540
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry!ˉs AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]
http://zm699.com/Products/mosgnce65r.html3星
[新洁能] MOS管 NCE60P50[ 2014-10-09 ]
MOS管 NCE60P50
The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load applications.[查看]
http://zm699.com/Products/mosgnce60p.html3星
[新洁能] MOS管 NCE0117[ 2014-10-09 ]
MOS管 NCE0117
The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]
http://zm699.com/Products/mosgnce011.html3星
[新洁能] MOS管 NCE4060k[ 2014-10-09 ]
MOS管 NCE4060k
The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]
http://zm699.com/Products/23mosgnce406.html3星
记录总数:35 | 页数:212