The NCE0213 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]

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The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]

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The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]

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The NCE7075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]

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The NCE7578 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.[查看]

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The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]

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The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.[查看]

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The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested[查看]

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The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.[查看]

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The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.[查看]

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The UTC 10N60K is an N-channel Power MOSFET using UTC`s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N60K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.[查看]

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AP8266是一款高集成度的电流模式PWM控制芯片,典型功率12V3A，具有高性能、低待机功耗、低成本等特点。AP8266内置绿色降频工作模式，根据负载情况调节工作频率，减少了开关损耗，从而获得较低的待机功耗的较高的转换效率。同时AP8266提供了丰富的保护，包括：逐周期过流保护、过压保护、过压箝位、欠压锁存、过温保护、过载保护，同时具有软启动和间歇工作模式功能。一旦出现故障，芯片进入自动重启状态故障排除。[查看]

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PN8136内部集成了脉宽调制控制器和功率MOSFET，专用于高性能、外围元器件精筒的交直流转换开关电源。该芯片提 供了极为全面和性能优异的智能化保护功能，包括逐周期过流保护、过载保护、过温保护、输出过压保护等。[查看]

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PN8137内部集成了脉宽调制控制器和功率MOSFET，用于高性能、外围元器件精简的交直流转换开关电源。该芯片提供了性能优异的智能化保护功能，包括周期式过流保护（外部可调）、过载保护、软启动功能。通过Hi-mode、Eco-mode、Burst-mode的三种脉冲功率调节模式混合技术和特殊器件低功耗结构技术实现了低的待机功耗、电压范围下的效率。良好的EMI表现由频率调制技术和SoftDriver技术充分保证。该芯片还内置智能启动模块。非常适用于DVB领域。[查看]

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AP8022芯片内部集成了脉宽调制控制器和新一代的高可靠性功率MOSFET，适用于小功率离线式开关电源。该芯片提供的智能化保护功能，包括过流保护，过压保护，欠压保护，过温保护。[查看]

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PN8024R芯片内部集成了脉宽调制控制器和高雪崩能力的功率MOSFET，适用于小功率非隔离开关电源。[查看]

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PN8126F芯片内部集成了脉宽调制控制器和高雪崩能力的功率MOSFET，适用于小功率非隔离开关电源。[查看]

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BF6921A 是基于8/16 个电容检测电极的数字控制器。BF6921A 为使用者提供了低成本的触摸方案，配合程序可以实现按键、滑条、滚轮等应用。并把按键状态通过IO 口输出，如LED 等。 8/16 个按键都能独立的运行，并且每个按键都能通过对相应的特殊功能寄存器写命来 调节灵敏度。 BF6921A 通过 IIC 与主机进行通信。 BF6921A 包含一个主频为 32MHZ 的单片机内核和一些其他外围设备[查看]

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BF6910AX/11AX是基于10/14/22个电容检测通道的芯片，它可以用来检测近距离感应或者触摸，其内置MCU,可灵活配置，通过配置可实现按键、滚轮，滑条等多种应用。 10/14/22个按键都能独立的运行，并且每个按键都能通过对相应的特殊功能寄存器写命令来调节灵敏度。 BF6910AX/11AX通过IIC与主机进行通信。 BF6910AX/11AX包含一个主频为24MHZ的单片机内核和一些其它外围设备[查看]

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BF6971AS14 多可以支持17 路GPIO 的芯片，其中8 路GPIO 支持40mA 的灌电流，在驱动LED 时无需三极管等电流放大器件。BF6971AS14 含一路16bit 的PWM 输出模块。 BF6971AS14 通过IIC 或UART 与主机进行通信。 BF6971AS14 包含一个主频为24MHZ 的单片机内核和一些其他外围设备[查看]

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