Description The NCE3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications[查看]

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General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]

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General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]

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The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]

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The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]

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The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]

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The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]

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The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]

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MOS管--3407 封装是SOT-23.THE NCE3407 USES ADVANCED TRENCH TECHNOLOGU TO JROVIDE EXCELLONT RDS(ON).[查看]

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AP3128A是一款专门为白光LED驱动而设计的恒流DC/DC转换器。内部MOSFET能够同时支持10个白光LED背光和OLED电源的应用，且内部软启动功能可以减少浪涌电流。AP3128A采用电流模式，固定1.0MHz频率，通过外部电流检测电阻来调节LED电流。300mV的低反馈电压能够减小电源功耗。 其他特性还包括限流保护，过温保护，欠压保护和过压保护功能。 AP3128A采用纤小的SOT-23-6L和DFN-8L 2X2封装。[查看]

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AP2960是一款宽输入范围，效率CC/CV功能的降压芯片，既可以CV（恒压）输出，也可以CC（恒流）输出。AP2960可在350kHz的开关频率下提供3.0A输出电流。AP2960不需要使用高成本的精密电流采样电阻，非常适用于有精确恒流需求的电池和适配器应用场合。通过清除产生功耗的电流采样电阻,相比传统恒流开关稳压器拥有转换效率。保护特性包括逐周期限流，热关断以及短路恢复功能。SOP8-EP封装,工作时仅需要较少的外围器件。[查看]

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AP2962B是一款宽输入范围，CC/CV功能的降压芯片，既可以CV（恒压）输出，也可以CC（恒流）输出。AP2962B高可在230kHz的开关频率下提供2A输出电流。AP2962B不需要使用高成本的精密电流采样电阻，非常适用于有精确恒流需求的电池和适配器应用场合。通过清除产生功耗的电流采样电阻，AP2962B相比传统恒流开关稳压器拥有高的转换效率。[查看]

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PN8370M集成待机功耗准谐振原边控制器及650V高雪崩能力智能功率MOSFET，用于高性能、外围元器件精简的充电 器、适配器和内置电源。PN8370为原边反馈工作模式，可省略光耦和TL431。内置高压启动电路，可实现芯片空载损耗（230VAC ） 小于30mW。[查看]

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PN8305L包括同步整流控制器及N型功率MOSFET，用于在高性能反激系统中替代次级整流肖特基二极管。PN8305L内置电压降极低的功率MOSFET以提高电流输出能力，提升转换效率并降低芯片温度.PN8305L处于开关工作模式，只适用于DCM和QR工作模式的开关电源系统。[查看]

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PN8147内部集成了脉宽调制控制器和功率MOSFET，用于高性能、外围元器件精简的交直流转换开关电源.[查看]

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PN8145内部集成了脉宽调制控制器和功率MOSFET，用于高性能、外围元器件精简的交直流转换开关电源。[查看]

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AP8267是高度集成的电流模式PWM控制芯片，具有高性能、低待机功耗、低成本等特点。AP8267内置绿色降频工作模式，根据负载情况调节工作频率，减少了开关损耗，从而获得较低的待机功耗和较高的转换效率，同时集成了峰值功率模块，通过升频电路可有效的减小变压器的磁通和磁芯体积。[查看]

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PN8368 集成待机功耗准谐振原边控制器及650V高雪崩能力智能功率MOSFET，用于高性能、外围元器件精简的充电 器、适配器和内置电源。PN8370为原边反馈工作模式，可省略光耦和TL431。内置高压启动电路，可实现芯片空载损耗（230VAC ） 小于30mW。[查看]

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PN8044M集成PFM控制器及650V高雪崩能力智能功率MOSFET，用于外围元器件的小功率非隔离开关电源， PN8044M 内置650V高压启动模块，实现系统快速启动、待机功能。该芯片提供的智能化保护功能，包括过载保护，欠压保护，过温保护。另外PN8044M的降频调制技术有助于EMI特性。[查看]

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PN8034M电源管理芯片集成PFM控制器及650V高雪崩能力智能功率MOSFET，用于外围元器件极精简的小功率非隔离开关电源， PN8034M 内置650V高压启动模块，实现系统快速启动、待机功能。该芯片提供的智能化保护功能，包括过流保护，欠压保护，过温保护。另外PN8034M的降频调制技术有助于EMI特性。[查看]

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