PN8039集成PFM控制器及650V高雪崩能力智能功率MOSFET，用于外围元器件极精简的小功率非隔离开关电源。PN8039内置高压启动模.块，实现系统快速启动、超低待机。该芯片提供了完整的智能化保护功能，包括过载保护、欠压保护、过温保护。另外PN8039的降频调制技术有助于改善EMI特性。[查看]

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IP6559是一款集成升降压控制器和路径NMOS的控制功能，支持QC2.0/QC3.0/QC3+/AFC/FCP/ SCP/ V00C，以及Type-C USB CPD2.0/PD3.0(PPS)输出快充协议的SOC,为快充适配器和车载充电器提供完整的电源解决方案。[查看]

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IP6537U是一款集成同步开关的降压SOC，支持多种快充输出协议，为车载充电器和快充适配器提供完整的解决方案。IP6537U内置功率MOS，输入电压范围是7.2V到32V，输出电压范围是3V到21V，可提供最大45W 的输出功率，能够根据识别到的快充协议自动调整输出电压和电流。[查看]

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The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MOSFET fits theindustry’s AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial power applications[查看]

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The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]

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The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MOSFET fits theindustry’s AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial power applications[查看]

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The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recovery bodydiode.This super junction MOSFET fits the industry’s AC-DCSMPS requirements for PFC, AC/DC power conversion,industrial power applications,Fast charger, new energyvehicle charging pile, on-board OBC etc[查看]

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The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recovery bodydiode.This super junction MOSFET fits the industry’s AC-DCSMPS requirements for PFC, AC/DC power conversion,industrial power applications,Fast charger, new energyvehicle charging pile, on-board OBC etc.[查看]

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The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recovery bodydiode.This super junction MOSFET fits the industry’s AC-DCSMPS requirements for PFC, AC/DC power conversion,industrial power applications,Fast charger, new energyvehicle charging pile, on-board OBC etc.[查看]

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The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recovery bodydiode.This super junction MOSFET fits the industry’s AC-DCSMPS requirements for PFC, AC/DC power conversion,industrial power applications,Fast charger, new energyvehicle charging pile, on-board OBC etc.[查看]

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PN7901M是一款隔离式单通道栅极驱动芯片，该芯片可以作为大功率MOSFET. IGBT和SiC的驱动开关。PN7901M至少提供5A的隔离输出电流，并且具有3A拉电流的米勒钳位功能。输入逻辑控制管脚IN+和IN-能够在3.1V到24V的宽输入电压范围内工作。[查看]

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PN7901是-款隔离式单通道栅极驱动芯片，该芯片可以作为大功率MOSFET和IGBT的驱动开关。PN7901至少提供5A的隔离输出电流，井且具有较小的传播延时和脉冲宽度失真。输入逻辑控制管脚IN+和IN-能够在3V到20V的宽输入电压范围内工作，兼容3.3V和5V的信号控制。[查看]

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PN7922是-款隔离式双通道栅极驱动芯片，该芯片可以作为大功率MOSFET和IGBT的驱动开关。PN7922每- -路至少提供4A拉电流和8A灌电流的峰值电流，并且具有较小的传播延时和脉冲宽度失真。[查看]

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PN7903是一款光耦兼容型单通道隔离栅极驱动芯片,该芯片可以作为大功率MOSFET. SiC和IGBT的驱动开关。PN7903的输入级和光耦特性-致，并且引脚分配保持兼容，在良好兼容采用传统光耦设计的原理图、PCB的同时，提供了更好的可靠性和使用寿命。[查看]

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IP6537是一款集成同步开关的降压转换器、支持14种输出快充协议、支持Type-C输出和USB PD2.0/PD3.0(PPS)协议的SoC，为车载充电器、快充适配器、智能排插提供完整的解决方案。IP6537支持USB Type-C或者USB A输出，5V输出功率为 5V/3.4A。IP6537内置功率MOS，输入电压范围是7.1V到32V，输出电压范围是3V到20V，最大能提供45W的输出功率，能够根据识别到的快充协议自动调整输出电压和电流。[查看]

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IP6529_Q1是一款集成同步开关的降压SOC，支持多种快充输出协议，为车载USB Type-C PD充电器提供完整的解决方案。IP6529_Q1内置功率MOS，输入电压范围是7.3V~29.5V， 输出电压范围是3.0V~21V，能提供最大45W的输出功率，能够根据识别到的快充协议自动调整输出电压和电流，典型输出电压和电流有：5V/3A，9V/3A。[查看]

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ID2005是一款基于P衬底，P外延工艺的高压，高速功辜MOSFET和IGBT驱动芯片，具有独立的高低边参考输出通道。该浮动通道可用于驱动高侧配置的N沟道功率MOSFET,工作电压高达200V。输入信号可以兼容CMOS和LSTTL信号,逻辑输入电平低至3.3V。具有大电流输出能力.[查看]

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ID2006是-款基于P衬底、P外延工艺的高压、高速功率MOSFET和IGBT驱动芯片，具有独立的高低边参考输出通道。该浮动通道可用于驱动高侧配置的N沟道功率MOSFET,工作电压高达200V。输入信号可以兼容CMOS和LSTTL信号，逻辑输入电平低至3.3V。具有大电流输出能力。[查看]

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PN7762是一款双通道、高速低侧栅极驱动芯片，该芯片可以作为大功率MOSFET和IGBT的驱动开关。PN7762的输出可以提供高达5A拉电流和5A灌电流的峰值电流脉冲，且输入信号到输出信号的传播延时极小，典型值为22ns。此外,该芯片的两个通道之间的传播匹配延时小于2ns，可 将两个通道并联使用。该芯片的输入管脚INA、INB兼容5V和3.3V信号控制，具有良好的抗干扰性。[查看]

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