SVS11N60T/F N沟道增强高压功率MOSFET采用士兰微电子DP MOS技术新平台制造，具有很低的传导损耗和开关损耗。使得功率转换器高功率密度，提高热行为。[查看]

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AP2005 是电流模式 DC-DC 升压转换器。它是内置 0.05欧姆功率 MOSFET的 PWM电路使转换器效率高。内部补偿电路也减少多达 6 个外部器件。误差放大器的同相输入端连接到一个精准的 0.6V基准电压。内部软启动功能，可降低浪涌电流。 AP2005 适应于 SOP8-PP 封装，为应用领域节省PCB空间。[查看]

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AP2953A是一款单片同步整流降压稳压器，它集成了导通阻抗100m?的MOSFET，可以在很宽的输入电压范围（4.75V-18V）内提供3A的负载能力。电流模式控制使其具有的瞬态响应和单周期内的限流功能。 可调的软启动时间能避免开启瞬间的冲击电流，在停机 模式下，输入电流小于1uA。 AP2953A封装为SOP8-PP, 同时提供了紧凑的系统方案，可以限度的减少外围元件。[查看]

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PN8355 5V1A包括高精度的恒压、恒流原边控制器及功率MOSFET，用于高性能、外围元器件精简的充电器和LED照明。PN8355工作在原边检测和调整模式，可省略光耦和TL431。该芯片提供的自恢复保护功能，包含逐周期过流保护、过压保护、开环保护、过温保护、输出短路保护和CS开/短路保护等。内置高压启动电路和极低的芯片功耗使得能够满足较高的待机功耗标准。在恒流模式，电流和输出功率可通过CS脚的Rs电阻进行调节；在恒压模式，PFM工作模式可获得较高的性能和效率。轻载时，该芯片采用较小的峰值电流工作以减小音频噪声。另外，输出线补偿功能有助于获得较好的负载调整率。[查看]

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PN8359 5V2.4A/12V1A包括高精度的恒压、恒流原边控制器及功率MOSFET，用于高性能、外围元器件精简的充电器和LED照明。PN8359工作在原边检测和调整模式，可省略光耦和TL431。该芯片提供的自恢复保护功能，包含逐周期过流保护、过压保护、开环保护、过温保护、输出短路保护和CS开/短路保护等。内置高压启动电路和极低的芯片功耗使得能够满足较高的待机功耗标准。在恒流模式，电流和输出功率可通过CS脚的Rs电阻进行调节；在恒压模式，PFM工作模式可获得较高的性能和效率。轻载时，该芯片采用较小的峰值电流工作以减小音频噪声。另外，输出线补偿功能有助于获得较好的负载调整率。[查看]

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The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry!ˉs AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.[查看]

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The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load applications.[查看]

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The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]

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The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]

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The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.[查看]

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The NCE7578 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.[查看]

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The NCE8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.[查看]

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The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested[查看]

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The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.[查看]

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The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.[查看]

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The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.[查看]

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The UTC 4N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power TO-251TO-220F2supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.[查看]

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The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.[查看]

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The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.[查看]

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The UTC 10N60K is an N-channel Power MOSFET using UTC`s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N60K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.[查看]

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